DDTA114TUA-7-F
TRANS PREBIAS PNP 50V SOT323Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
DDTA114TUA-7-F from Diodes Incorporated is a PNP pre-biased bipolar transistor. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device boasts a transition frequency of 250MHz and a maximum power dissipation of 200mW. It is supplied in a SOT-323 package for surface mounting. The internal base resistor (R1) is rated at 10 kOhms, with a minimum DC current gain (hFE) of 100 at 1mA collector current and 5V Vce. Collector cutoff current (ICBO) is specified at a maximum of 500nA. Saturation voltage (Vce Sat) is 300mV maximum at 100µA base current and 1mA collector current. This transistor is commonly utilized in industrial automation and consumer electronics applications. The DDTA114TUA-7-F is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
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