DDTA114TKA-7-F
TRANS PREBIAS PNP 50V SC59-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTA114TKA-7-F is a PNP, pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current capability of 100 mA. With a transition frequency of 250 MHz and a maximum power dissipation of 200 mW, it is suitable for signal switching and amplification tasks. The device includes an integrated base resistor (R1) of 10 kOhms, simplifying circuit design. Packaged in a compact SC-59-3 (TO-236-3, SOT-23-3) format and supplied on tape and reel, this transistor finds application in consumer electronics and industrial automation. The minimum DC current gain (hFE) is 100 at 1 mA collector current and 5 V collector-emitter voltage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | SC-59-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |