DDTA114TE-7-F
TRANS PREBIAS PNP 50V SOT523Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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The Diodes Incorporated DDTA114TE-7-F is a PNP pre-biased bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 250MHz and a maximum power dissipation of 150mW, it offers a DC current gain (hFE) of at least 100 at 1mA and 5V. The device includes an integrated base resistor of 10 kOhms, simplifying circuit design. Packaged in a compact SOT-523, the DDTA114TE-7-F is suitable for use in consumer electronics and industrial control systems where space and performance are critical. The component is supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | SOT-523 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
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