DDTA114GKA-7-F
TRANS PREBIAS PNP 50V SC59-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Diodes Incorporated DDTA114GKA-7-F is a PNP – Pre-Biased Bipolar Junction Transistor (BJT). This surface mount component, packaged in an SC-59-3 (TO-236-3, SC-59, SOT-23-3) configuration, offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It features an optimized internal emitter base resistor (R2) of 10 kOhms, facilitating simplified circuit design. With a transition frequency of 250 MHz and a maximum power dissipation of 200 mW, the DDTA114GKA-7-F is suitable for various applications including digital logic circuits, signal switching, and amplification in consumer electronics and industrial control systems. The device exhibits a minimum DC current gain (hFE) of 30 at 5 mA and 5 V, and a saturation voltage (Vce Sat) of 300 mV at 500 µA and 10 mA. Supplied on tape and reel, this component is designed for efficient automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | SC-59-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Emitter Base (R2) | 10 kOhms |