DDTA114GE-7-F
TRANS PREBIAS PNP 50V SOT523Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTA114GE-7-F is a PNP pre-biased bipolar transistor. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 250MHz and a power dissipation of 150mW, it is designed for surface mount applications in a SOT-523 package. The internal emitter base resistor (R2) is 10 kOhms, and the device exhibits a minimum DC current gain (hFE) of 30 at 5mA and 5V. This transistor is suitable for applications requiring simplified biasing, commonly found in consumer electronics and industrial control systems. The component is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | SOT-523 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Emitter Base (R2) | 10 kOhms |
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