DDTA114GCA-7-F
TRANS PREBIAS PNP 50V SOT23-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTA114GCA-7-F is a PNP pre-biased bipolar transistor designed for surface mount applications. This component, packaged in a SOT-23-3 (TO-236-3, SC-59) configuration, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 5mA/5V, a transition frequency of 250MHz, and a maximum power dissipation of 200mW. It features an internal emitter base resistor (R2) of 10 kOhms, simplifying circuit design. The saturation voltage (Vce Sat) is specified at 300mV maximum for 500µA base current and 10mA collector current. This transistor is suitable for use in industrial control systems, consumer electronics, and communication infrastructure. The device is supplied on a Tape & Reel (TR) for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Emitter Base (R2) | 10 kOhms |
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