DDTA114EUA-7
TRANS PREBIAS PNP 50V SOT323Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTA114EUA-7 is a PNP – Pre-Biased Bipolar Junction Transistor designed for surface mount applications. This component features integrated base resistors for simplified circuit design, offering a common-emitter DC current gain (hFE) of a minimum of 30 at 5mA collector current and 5V collector-emitter voltage. The transistor supports a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. With a transition frequency of 250 MHz and a maximum power dissipation of 200 mW, it is suitable for use in consumer electronics and industrial control systems. The device is supplied in a SOT-323 package, presented on tape and reel. The internal base resistors are specified as R1 and R2, both at 10 kOhms. Saturation voltage (Vce Sat) is a maximum of 300mV at 500µA base current and 10mA collector current, with a collector cutoff current of 500nA.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |