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DDTA114EUA-7

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DDTA114EUA-7

TRANS PREBIAS PNP 50V SOT323

Manufacturer: Diodes Incorporated

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated DDTA114EUA-7 is a PNP – Pre-Biased Bipolar Junction Transistor designed for surface mount applications. This component features integrated base resistors for simplified circuit design, offering a common-emitter DC current gain (hFE) of a minimum of 30 at 5mA collector current and 5V collector-emitter voltage. The transistor supports a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. With a transition frequency of 250 MHz and a maximum power dissipation of 200 mW, it is suitable for use in consumer electronics and industrial control systems. The device is supplied in a SOT-323 package, presented on tape and reel. The internal base resistors are specified as R1 and R2, both at 10 kOhms. Saturation voltage (Vce Sat) is a maximum of 300mV at 500µA base current and 10mA collector current, with a collector cutoff current of 500nA.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Supplier Device PackageSOT-323
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition250 MHz
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms

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