DDTA114EE-7-F
TRANS PREBIAS PNP 50V SOT523Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTA114EE-7-F is a PNP pre-biased bipolar junction transistor (BJT). This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With an impressive transition frequency of 250MHz and a maximum power dissipation of 150mW, it is suitable for high-frequency applications. The internal base resistors, R1 and R2, are both specified at 10 kOhms, simplifying circuit design. Provided in a SOT-523 surface mount package, this device is supplied on tape and reel. The DDTA114EE-7-F is commonly utilized in consumer electronics, industrial control, and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | SOT-523 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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