DDTA114ECA-7
TRANS PREBIAS PNP 50V SOT23-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated DDTA114ECA-7 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mounting in a SOT-23-3 package. This component features a collector-emitter breakdown voltage of 50V, a maximum collector current of 100mA, and a transition frequency of 250MHz. With an integrated base resistor (R1) of 10 kOhms and an emitter-base resistor (R2) of 10 kOhms, it simplifies circuit design. The maximum power dissipation is 200mW, and it exhibits a Vce saturation of 300mV at 500µA base current and 10mA collector current. The DC current gain (hFE) is a minimum of 30 at 5mA collector current and 5V Vce. This transistor is suitable for applications requiring signal amplification and switching in consumer electronics and industrial control systems. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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