DDTA113ZUA-7
TRANS PREBIAS PNP 50V SOT323Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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The Diodes Incorporated DDTA113ZUA-7 is a PNP pre-biased bipolar junction transistor in a SOT-323 package. This device features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It offers a transition frequency of 250 MHz and a maximum power dissipation of 200 mW. The integrated base resistors are R1 at 1 kOhm and R2 at 10 kOhm, providing a minimum DC current gain (hFE) of 33 at 10 mA collector current and 5 V collector-emitter voltage. Saturation voltage (Vce Sat) is specified at a maximum of 300 mV for 500 µA base current and 10 mA collector current. The collector cutoff current is a maximum of 500 nA. This component is commonly utilized in industrial and consumer electronics applications requiring simplified circuit design and reduced component count. The DDTA113ZUA-7 is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 10mA, 5V |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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