DDTA113ZE-7-F
TRANS PREBIAS PNP 50V SOT523Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
The Diodes Incorporated DDTA113ZE-7-F is a PNP pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With an internal base resistor (R1) of 1 kOhm and an emitter-base resistor (R2) of 10 kOhm, it offers a minimum DC current gain (hFE) of 33 at 10mA collector current and 5V Vce. The transition frequency for this device is 250 MHz, with a maximum power dissipation of 150 mW. The DDTA113ZE-7-F is supplied in a SOT-523 package and is available on tape and reel (TR). This transistor is suitable for use in consumer electronics and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 10mA, 5V |
| Supplier Device Package | SOT-523 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
Request a Quote
Clients Also Buy
DDTA115GCA-7
TRANS PREBIAS PNP 200MW SOT23-3
DDTC144VKA-7-F
TRANS PREBIAS NPN 50V SC59-3
DDTA114TCA-7-F
TRANS PREBIAS PNP 50V SOT23-3
