DDTA113ZCA-7
TRANS PREBIAS PNP 50V SOT23-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated PNP Pre-Biased Transistor, DDTA113ZCA-7. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 250MHz and a power dissipation of 200mW, it is supplied in a SOT-23-3 surface mount package. Key internal biasing includes a 1 kOhm base resistor (R1) and a 10 kOhm emitter-base resistor (R2), resulting in a minimum DC current gain (hFE) of 33 at 10mA collector current and 5V Vce. Saturation voltage is specified at 300mV maximum for 500µA base current and 10mA collector current. This component is commonly utilized in consumer electronics, industrial control systems, and telecommunications infrastructure. It is available on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 10mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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