DDTA113TKA-7-F
TRANS PREBIAS PNP 50V SC59-3Manufacturer: Diodes Incorporated
Categories: Single, Pre-Biased Bipolar Transistors
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Diodes Incorporated's DDTA113TKA-7-F is a PNP pre-biased bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. With a transition frequency of 250 MHz and a maximum power dissipation of 200 mW, it is suitable for various signal switching and amplification tasks. The transistor is packaged in an SC-59-3 (TO-236-3) format and supplied on a tape and reel. Key electrical parameters include a minimum DC current gain (hFE) of 100 at 1mA/5V and a Vce saturation of 300mV at 1mA/10mA, with a base resistor (R1) of 1 kOhms. This device finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | SC-59-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 1 kOhms |