DGTD65T60S2PT
IGBT 600V-X TO247 TUBE 0.45KManufacturer: Diodes Incorporated
Categories: Single IGBTs
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Diodes Incorporated DGTD65T60S2PT is a 650 V Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component features a maximum collector current of 100 A and a pulsed collector current of 180 A, with a maximum power dissipation of 428 W. The TO-247-3 package allows for through-hole mounting, facilitating robust thermal management. Key electrical parameters include a Vce(on) of 2.4V at 15V and 60A, and a gate charge of 95 nC. Switching characteristics are defined by a turn-on delay of 42ns and turn-off delay of 142ns at 25°C, with switching energies of 920µJ (on) and 530µJ (off) under a test condition of 400V, 60A, 7 Ohm, and 15V. The operating temperature range is from -40°C to 175°C (TJ). This device is suitable for power factor correction, motor drives, and uninterruptible power supply (UPS) systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 205 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 60A |
| Supplier Device Package | TO-247 |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 42ns/142ns |
| Switching Energy | 920µJ (on), 530µJ (off) |
| Test Condition | 400V, 60A, 7Ohm, 15V |
| Gate Charge | 95 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 428 W |
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