DGTD65T50S1PT
IGBT 600V-X TO247 TUBE 0.45KManufacturer: Diodes Incorporated
Categories: Single IGBTs
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Diodes Incorporated offers the DGTD65T50S1PT, a Field Stop Insulated Gate Bipolar Transistor (IGBT). This component features a 650 V collector-emitter breakdown voltage and a 100 A continuous collector current, with a pulsed capability of 200 A. The IGBT type is Field Stop with a standard input. It is housed in a TO-247-3 package for through-hole mounting. Key performance characteristics include a maximum power dissipation of 375 W and a Vce(on) of 2.4 V at 15 V gate-emitter voltage and 50 A collector current. Gate charge is specified at 287 nC. The device exhibits switching energy of 770 µJ (on) and 550 µJ (off) under test conditions of 400 V, 50 A, 7.9 Ohm, and 15 V. Operating temperature ranges from -40°C to 175°C (TJ). This device is commonly utilized in power switching applications across industries such as industrial automation, power supplies, and motor control. The DGTD65T50S1PT is supplied in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 80 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 50A |
| Supplier Device Package | TO-247 |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 58ns/328ns |
| Switching Energy | 770µJ (on), 550µJ (off) |
| Test Condition | 400V, 50A, 7.9Ohm, 15V |
| Gate Charge | 287 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 375 W |
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