DGTD65T40S2PT
IGBT 600V-X TO247 TUBE 0.45KManufacturer: Diodes Incorporated
Categories: Single IGBTs
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Diodes Incorporated DGTD65T40S2PT is a 650 V, 80 A Field Stop Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247 package. This through-hole component features a maximum collector power dissipation of 230 W and a pulsed collector current (Icm) of 120 A. With a gate charge (Qg) of 60 nC, typical turn-on delay (Td(on)) is 6 ns and turn-off delay (Td(off)) is 55 ns at 25°C, under test conditions of 400V, 40A, 10 Ohm, 15V. The collector-emitter saturation voltage (Vce(on)) is a maximum of 2.3 V at 15 V gate-emitter voltage and 40 A collector current. Reverse recovery time (trr) is 60 ns. Operating temperature ranges from -40°C to 175°C (TJ). This device is suitable for applications in power factor correction and motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
| Supplier Device Package | TO-247 |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 6ns/55ns |
| Switching Energy | 500µJ (on), 400µJ (off) |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 60 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 230 W |
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