DGTD120T40S1PT
IGBT 1200V-X TO247 TUBE 0.45KManufacturer: Diodes Incorporated
Categories: Single IGBTs
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Diodes Incorporated DGTD120T40S1PT is a 1200V, 80A Field Stop Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247 package. This through-hole component offers a maximum continuous collector current (Ic) of 80A and a pulsed collector current (Icm) of 160A. With a maximum power dissipation of 357W and a collector-emitter saturation voltage (Vce(on)) of 2.4V at 15V gate-emitter voltage and 40A collector current, it is suitable for demanding power applications. Key parameters include a gate charge of 341 nC, a reverse recovery time (trr) of 100 ns, and switching energies of 1.96 mJ (turn-on) and 540 µJ (turn-off) under specified test conditions. This device is utilized in industrial power conversion, motor drives, and renewable energy systems. It is supplied in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 100 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
| Supplier Device Package | TO-247 |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 65ns/308ns |
| Switching Energy | 1.96mJ (on), 540µJ (off) |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Gate Charge | 341 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 357 W |
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