ZXMP6A17N8TC
MOSFET P-CH 60V 2.7A 8SOManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXMP6A17N8TC is a P-Channel MOSFET designed for demanding applications. This device features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2.7A at 25°C (Ta). With a typical Rds(on) of 125mOhm at 2.3A and 10V Vgs, it ensures efficient power switching. The ZXMP6A17N8TC operates with a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 1V. Key parameters include a maximum gate charge (Qg) of 17.7 nC at 10V and an input capacitance (Ciss) of 637 pF at 30V. The device offers a maximum power dissipation of 1.56W at 25°C (Ta) and is housed in an 8-SOIC package for surface mounting. This component is suitable for use in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 637 pF @ 30 V |