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ZXMP3F37N8TA

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ZXMP3F37N8TA

MOSFET P-CH 30V 6.4A 8SO

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZXMP3F37N8TA P-Channel MOSFET, designed for efficient power switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 6.4A at 25°C. With a low on-resistance of 25mOhm at 7.1A and 10V Vgs, it minimizes conduction losses. The device supports a wide gate-source voltage range up to ±20V and has a typical gate charge of 31.6 nC at 10V. Its high input capacitance of 1678 pF at 15V Vds ensures robust switching characteristics. The ZXMP3F37N8TA is housed in a surface-mount 8-SOIC package, suitable for automated assembly processes. Thermal performance is rated at 1.56W maximum power dissipation, with an operating temperature range of -55°C to 150°C. This MOSFET is commonly utilized in automotive, industrial, and consumer electronics power management circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C6.4A (Ta)
Rds On (Max) @ Id, Vgs25mOhm @ 7.1A, 10V
FET Feature-
Power Dissipation (Max)1.56W (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-SO
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs31.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1678 pF @ 15 V

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