ZXMP3F36N8TA
MOSFET P-CH 30V 7.2A 8SOManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated ZXMP3F36N8TA is a P-Channel MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 7.2A at 25°C. The Rds (On) is specified at a maximum of 20mOhm at 10A and 10V gate-source voltage. With a maximum power dissipation of 1.56W (Ta), it is suitable for surface mount configurations in an 8-SOIC package. Key parameters include a gate charge (Qg) of 43.9 nC at 15V and input capacitance (Ciss) of 2265 pF at 15V. Operating temperature ranges from -55°C to 150°C. This component finds application in various industries including automotive and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 43.9 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2265 pF @ 15 V |
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