ZXMP3F35N8TA
MOSFET P-CH 30V 9.3A 8SOManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXMP3F35N8TA is a P-Channel MOSFET designed for demanding applications. This component features a 30V drain-to-source voltage (Vdss) and supports a continuous drain current of 9.3A at 25°C. The device offers a low on-resistance (Rds On) of 12mOhm at 12A and 10V Vgs, with a maximum power dissipation of 1.56W. It operates with drive voltages ranging from 4.5V to 10V and has a gate threshold voltage (Vgs(th)) of 2.6V at 250µA. Input capacitance (Ciss) is a maximum of 4600pF at 15V, and gate charge (Qg) is 77.1 nC at 10V. The ZXMP3F35N8TA is supplied in an 8-SOIC package (0.154", 3.90mm width) for surface mounting. This MOSFET is suitable for use in automotive, industrial, and power management systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 77.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 15 V |
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