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ZXMP2120G4TA

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ZXMP2120G4TA

MOSFET P-CH 200V 200MA SOT223

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Diodes Incorporated ZXMP2120G4TA is a P-Channel MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 200mA at 25°C. With a maximum on-resistance (Rds On) of 25 Ohms at 150mA and 10V Vgs, it offers efficient switching. The device is constructed using MOSFET technology and is housed in a SOT-223-3 package, suitable for surface mounting. Key parameters include a gate-source threshold voltage (Vgs(th)) of 3.5V at 1mA and a maximum gate-source voltage (Vgs(max)) of ±20V. Input capacitance (Ciss) is rated at 100 pF at 25V. The ZXMP2120G4TA has a maximum power dissipation of 2W. This component finds application in industries such as industrial and consumer electronics. It is supplied in a Tape & Reel (TR) package.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Rds On (Max) @ Id, Vgs25Ohm @ 150mA, 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id3.5V @ 1mA
Supplier Device PackageSOT-223-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds100 pF @ 25 V

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