ZXMP2120G4TA
MOSFET P-CH 200V 200MA SOT223Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated ZXMP2120G4TA is a P-Channel MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 200mA at 25°C. With a maximum on-resistance (Rds On) of 25 Ohms at 150mA and 10V Vgs, it offers efficient switching. The device is constructed using MOSFET technology and is housed in a SOT-223-3 package, suitable for surface mounting. Key parameters include a gate-source threshold voltage (Vgs(th)) of 3.5V at 1mA and a maximum gate-source voltage (Vgs(max)) of ±20V. Input capacitance (Ciss) is rated at 100 pF at 25V. The ZXMP2120G4TA has a maximum power dissipation of 2W. This component finds application in industries such as industrial and consumer electronics. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 25Ohm @ 150mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | SOT-223-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 25 V |
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