ZXMP10A18K
MOSFET P-CH 100V 3.8A TO252-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated ZXMP10A18K is a P-Channel MOSFET designed for robust power control applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 3.8A at 25°C. With a maximum on-resistance (Rds On) of 150mOhm at 2.8A and 10V gate-source voltage, it offers efficient switching. The ZXMP10A18K is housed in a TO-252-3 (DPAK) surface-mount package, facilitating integration into compact designs. Its P-Channel technology and a maximum power dissipation of 2.17W (Ta) make it suitable for use in various industrial and consumer electronics, including power management and lighting systems. The device supports a gate drive voltage range from 6V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. Key electrical characteristics include a typical input capacitance (Ciss) of 1055pF and a gate charge (Qg) of 26.9nC at 10V. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.17W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 26.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1055 pF @ 50 V |