ZXMP10A17GQTC
MOSFET P-CH 100V 1.7A SOT223Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXMP10A17GQTC is a P-Channel MOSFET designed for demanding applications. This device features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 1.7A at 25°C. The ZXMP10A17GQTC offers a maximum on-resistance (Rds On) of 450mOhm at 1.2A and 6V Vgs. It is housed in a compact SOT-223-3 package, also known as TO-261-4 or TO-261AA, suitable for surface mounting. With a maximum power dissipation of 2W and a wide operating temperature range of -55°C to 150°C, this MOSFET is qualified to AEC-Q101 standards, making it suitable for automotive and industrial applications. Key electrical characteristics include a gate charge (Qg) of 10.7 nC at 10V Vgs and input capacitance (Ciss) of 424 pF at 50V Vds.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 1.2A, 6V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 424 pF @ 50 V |
| Qualification | AEC-Q101 |
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