ZXMNS3BM832TA
MOSFET N-CH 30V 2A 8MLPManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXMNS3BM832TA is an N-Channel Power MOSFET designed for efficient switching applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 2A at 25°C. The ZXMNS3BM832TA offers a low on-resistance (Rds On) of 180mOhm maximum at 1.5A and 4.5V Vgs, with a gate charge (Qg) of 2.9 nC maximum at 4.5V. It includes an integrated Schottky diode for enhanced performance. The MOSFET is housed in an 8-MLP (3x2) package, enabling surface mount integration. Key electrical parameters include an input capacitance (Ciss) of 314pF maximum at 15V Vds and a maximum gate-source voltage (Vgs) of ±12V. This component is suitable for use in automotive and industrial power management systems. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.5A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-MLP (3x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 314 pF @ 15 V |
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