ZXMN6A25K
MOSFET N-CH 60V 7A TO252-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated ZXMN6A25K is a N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain current (Id) capability of 7A at 25°C. The low on-resistance (Rds On) of 50mOhm at 3.6A and 10V Vgs, coupled with a maximum gate charge (Qg) of 20.4 nC at 10V, ensures efficient switching performance. Its maximum power dissipation is 2.11W (Ta) in a surface mount TO-252-3 (DPAK) package, suitable for automated assembly. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is utilized in power management, automotive electronics, and industrial control systems. The ZXMN6A25K offers a drive voltage range from 4.5V to 10V and a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.11W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1063 pF @ 30 V |
Request a Quote
Clients Also Buy
DMN2053UQ-7
MOSFET BVDSS: 8V~24V SOT23 T&R 3
DMN2011UFDF-13
MOSFET N-CH 20V 14.2A 6UDFN
DMN3008SFGQ-13
MOSFET N-CH 30V PWRDI3333
