ZXMN6A25G
MOSFET N-CH 60V 4.8A SOT223Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXMN6A25G is an N-Channel MOSFET designed for general-purpose switching applications. This device features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 4.8A at 25°C, with a maximum power dissipation of 2W (Ta). The Rds(On) is specified at a maximum of 50mOhm at 3.6A, 10V, with a gate drive voltage range of 4.5V to 10V. Key parameters include a Gate Charge (Qg) of 20.4 nC (Max) at 10V and an Input Capacitance (Ciss) of 1063 pF (Max) at 30V. The ZXMN6A25G utilizes Metal Oxide technology and is housed in a SOT-223-3 package, suitable for surface mounting (TO-261-4, TO-261AA). Operating temperature range is -55°C to 150°C (TJ). This component is commonly employed in power management, consumer electronics, and industrial automation. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | SOT-223-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1063 pF @ 30 V |
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