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ZXMN6A25G

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ZXMN6A25G

MOSFET N-CH 60V 4.8A SOT223

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZXMN6A25G is an N-Channel MOSFET designed for general-purpose switching applications. This device features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 4.8A at 25°C, with a maximum power dissipation of 2W (Ta). The Rds(On) is specified at a maximum of 50mOhm at 3.6A, 10V, with a gate drive voltage range of 4.5V to 10V. Key parameters include a Gate Charge (Qg) of 20.4 nC (Max) at 10V and an Input Capacitance (Ciss) of 1063 pF (Max) at 30V. The ZXMN6A25G utilizes Metal Oxide technology and is housed in a SOT-223-3 package, suitable for surface mounting (TO-261-4, TO-261AA). Operating temperature range is -55°C to 150°C (TJ). This component is commonly employed in power management, consumer electronics, and industrial automation. The device is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4.8A (Ta)
Rds On (Max) @ Id, Vgs50mOhm @ 3.6A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Supplier Device PackageSOT-223-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1063 pF @ 30 V

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