ZXMN6A11GTC
MOSFET N-CH 60V 3.1A SOT223Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXMN6A11GTC is a high-performance N-Channel MOSFET designed for demanding applications. This device features a 60V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 3.1A at 25°C ambient temperature. The ZXMN6A11GTC offers a low on-resistance of 120mOhm maximum at 2.5A and 10V Vgs, contributing to efficient power handling with a maximum power dissipation of 2W (Ta). It supports a gate drive voltage range from 4.5V to 10V for optimal Rds(on) performance. With a gate charge of 5.7nC (max) at 10V and an input capacitance of 330pF (max) at 40V Vds, it is suitable for switching applications. The ZXMN6A11GTC is packaged in a compact SOT-223-3 (TO-261-4, TO-261AA) surface-mount configuration, supplied on tape and reel. This component finds utility in automotive, industrial, and consumer electronics sectors. It operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-223-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 40 V |
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