ZXMN6A08E6TC
MOSFET N-CH 60V 2.8A SOT26Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXMN6A08E6TC is a 60V N-Channel MOSFET designed for surface mount applications in a SOT-26 package. This device features a continuous drain current (Id) rating of 2.8A (Ta) and a maximum power dissipation of 1.1W (Ta). The on-resistance (Rds On) is specified at 80mOhm maximum at 4.8A and 10V gate drive. Key parameters include a gate charge (Qg) of 5.8 nC (max) at 10V and input capacitance (Ciss) of 459 pF (max) at 40V. The operating temperature range is -55°C to 150°C (TJ). This component is utilized in various industries requiring efficient switching and power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-26 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 459 pF @ 40 V |
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