ZXMN6A07FTC
MOSFET N-CH 60V 1.2A SOT23-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated ZXMN6A07FTC is an N-Channel MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) capability of 1.2A at 25°C, with a maximum power dissipation of 625mW. The device exhibits a low on-resistance (Rds On) of 250mOhm at 1.8A and 10V Vgs, with a specified gate threshold voltage (Vgs(th)) of 3V at 250µA. Key parameters include a maximum gate-source voltage (Vgs(max)) of ±20V, input capacitance (Ciss) of 166pF at 40V Vds, and gate charge (Qg) of 3.2nC at 10V Vgs. Operating across a temperature range of -55°C to 150°C, the ZXMN6A07FTC is housed in a compact SOT-23-3 (TO-236-3, SC-59) surface-mount package, supplied on tape and reel. This MOSFET is suitable for use in various industries including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 166 pF @ 40 V |
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