ZXMN3B04N8TC
MOSFET N-CH 30V 7.2A 8SOManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXMN3B04N8TC is a N-Channel MOSFET designed for efficient power switching applications. This component features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 7.2A at 25°C. The low on-resistance of 25mOhm at 7.2A and 4.5V gate-source voltage ensures minimal power loss during operation. The device exhibits a maximum gate charge (Qg) of 23.1 nC at 4.5V and an input capacitance (Ciss) of 2480 pF at 15V, facilitating fast switching characteristics. With a maximum power dissipation of 2W (Ta) and an operating temperature range of -55°C to 150°C, it is suitable for demanding environments. The ZXMN3B04N8TC is housed in an 8-SOIC package, ideal for surface mounting. This MOSFET finds application in various industries including consumer electronics, industrial automation, and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2480 pF @ 15 V |
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