ZXMN3A14FTA
MOSFET N-CH 30V 3.2A SOT23-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXMN3A14FTA is an N-Channel Power MOSFET designed for various applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 3.2A at 25°C. The device offers a low On-Resistance (Rds On) of 65mOhm maximum at 3.2A and 10V Vgs, with a Gate-Source Voltage (Vgs) range of ±20V. The threshold voltage (Vgs(th)) is a maximum of 2.2V at 250µA. Key parameters include a Gate Charge (Qg) of 8.6 nC maximum and Input Capacitance (Ciss) of 448 pF maximum. The ZXMN3A14FTA is housed in a SOT-23-3 package, suitable for surface mounting, and supports a maximum power dissipation of 1W. This MOSFET is utilized in sectors such as consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 448 pF @ 15 V |
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