ZXMN3A14FQTA
MOSFET N-CH 30V 3.9A SOT23-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated ZXMN3A14FQTA is an N-Channel MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.9A at 25°C, with a maximum power dissipation of 1.5W (Ta). Its low on-resistance of 65mOhm at 3.2A and 10V gate-source voltage (Vgs) ensures efficient switching. The ZXMN3A14FQTA is packaged in a compact SOT-23-3 (TO-236-3, SC-59) surface-mount configuration, supplied on tape and reel. With a gate charge (Qg) of 8.6 nC at 10V and input capacitance (Ciss) of 448 pF at 15V, it offers optimized performance for driving. This device is AEC-Q101 qualified and operates across a junction temperature range of -55°C to 150°C, making it suitable for automotive and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 448 pF @ 15 V |
| Qualification | AEC-Q101 |
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