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ZXMN3A03E6TC

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ZXMN3A03E6TC

MOSFET N-CH 30V 3.7A SOT23-6

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZXMN3A03E6TC is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 3.7A at 25°C ambient. The low on-resistance of 50mOhm at 7.8A and 10V Vgs, combined with efficient gate charge (12.6nC max at 10V), ensures optimal performance in switching applications. Packaged in a compact SOT-23-6 surface-mount configuration, it offers a maximum power dissipation of 1.1W (Ta). Key specifications include a gate-source voltage range of ±20V and a threshold voltage of 1V at 250µA. Input capacitance (Ciss) is rated at 600pF max at 25V. This component is suitable for use in automotive, industrial, and consumer electronics, particularly in power management and load switching circuits. The operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.7A (Ta)
Rds On (Max) @ Id, Vgs50mOhm @ 7.8A, 10V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageSOT-23-6
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 25 V

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