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ZXMN3A02X8TC

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ZXMN3A02X8TC

MOSFET N-CH 30V 5.3A 8MSOP

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZXMN3A02X8TC is a 30V N-channel MOSFET designed for efficient power management. This component features a low Rds(on) of 25mOhm at 12A and 10V Vgs, ensuring minimal conduction losses. With a continuous drain current capability of 5.3A (Ta) and a maximum power dissipation of 1.1W (Ta), it is suitable for demanding applications. The ZXMN3A02X8TC operates across a wide temperature range of -55°C to 150°C (TJ) and is offered in a compact 8-MSOP package, ideal for surface mounting. Key electrical characteristics include a gate charge of 26.8 nC (max) at 10V Vgs and an input capacitance of 1400 pF (max) at 25V Vds. This MOSFET is commonly utilized in power supplies, battery management, and automotive electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-TSSOP, 8-MSOP (0.118"", 3.00mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.3A (Ta)
Rds On (Max) @ Id, Vgs25mOhm @ 12A, 10V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package8-MSOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs26.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 25 V

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