ZXMN3A02N8TA
MOSFET N-CH 30V 7.3A 8SOManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated ZXMN3A02N8TA is an N-Channel MOSFET designed for efficiency and performance. This device features a drain-source breakdown voltage (Vdss) of 30V and offers a continuous drain current (Id) of 7.3A at 25°C with a maximum power dissipation of 1.56W. The low on-resistance (Rds On) of 25mOhm is achieved at 12A and 10V Vgs, with primary drive voltages specified between 4.5V and 10V. Key parameters include a maximum gate charge (Qg) of 26.8 nC at 10V and input capacitance (Ciss) of 1400 pF at 25V. The ZXMN3A02N8TA is housed in an 8-SOIC package, suitable for surface mounting, and operates across a wide temperature range of -55°C to 150°C. This component is commonly utilized in power management, automotive, and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
Request a Quote
Clients Also Buy
DMN3008SFGQ-13
MOSFET N-CH 30V PWRDI3333
DMP21D0UFB-7
MOSFET P-CH 20V 770MA 3DFN
DMTH43M8LFGQ-13
MOSFET N-CH 40V PWRDI3333
