ZXMN3A01FTC
MOSFET N-CH 30V 1.8A SOT23-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXMN3A01FTC is a discrete N-Channel MOSFET designed for power switching applications. This device features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) capability of 1.8A at 25°C ambient temperature, with a maximum power dissipation of 625mW (Ta). The ZXMN3A01FTC exhibits a low Rds(on) of 120mOhm at 2.5A and 10V Vgs, and a typical gate charge (Qg) of 3.9 nC at 10V Vgs, facilitating efficient switching performance. Its input capacitance (Ciss) is a maximum of 190 pF at 25V Vds. The device is housed in a compact SOT-23-3 surface-mount package, suitable for high-density board layouts. With an operating temperature range of -55°C to 150°C (TJ), this MOSFET is utilized across various industries, including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 25 V |
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