ZXMN3A01E6TC
MOSFET N-CH 30V 2.4A SOT23-6Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXMN3A01E6TC is an N-Channel MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.4A at an ambient temperature of 25°C, with a maximum power dissipation of 1.1W (Ta). The device exhibits a low on-resistance (Rds On) of 120mOhm at 2.5A and 10V Vgs. It operates with a gate-source voltage (Vgs) range up to ±20V, and a threshold voltage (Vgs(th)) of 1V at 250µA. Key electrical characteristics include a maximum gate charge (Qg) of 3.9 nC at 10V and a maximum input capacitance (Ciss) of 190 pF at 25V. The ZXMN3A01E6TC is housed in a compact SOT-23-6 surface-mount package and is supplied on a tape and reel. This MOSFET is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 25 V |
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