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ZXMN2F34MATA

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ZXMN2F34MATA

MOSFET N-CH 20V 4A DFN322

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZXMN2F34MATA is an N-Channel MOSFET designed for high-efficiency switching applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 4A at 25°C. The ZXMN2F34MATA offers a low on-resistance (Rds On) of 60mOhm maximum at 2.5A and 4.5V gate-source voltage (Vgs). With a gate charge (Qg) of 2.8 nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 277 pF maximum at 10V Vds, this MOSFET is optimized for fast switching performance. The device supports drive voltages from 2.5V to 4.5V, with a maximum Vgs of ±12V and a threshold voltage (Vgs(th)) of 1.5V maximum. Housed in a compact DFN322 (3-PowerVDFN) package, the ZXMN2F34MATA is suitable for surface mounting and offers a power dissipation of 1.35W at 25°C. It operates across a wide temperature range of -55°C to 150°C. This component is utilized in industries such as consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Rds On (Max) @ Id, Vgs60mOhm @ 2.5A, 4.5V
FET Feature-
Power Dissipation (Max)1.35W (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageDFN322
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds277 pF @ 10 V

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