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ZXMN2A14FTA

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ZXMN2A14FTA

MOSFET N-CH 20V 3.4A SOT23-3

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZXMN2A14FTA is an N-channel MOSFET designed for surface mount applications. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 3.4A at 25°C, with a maximum power dissipation of 1W in a SOT-23-3 package. The Rds On is specified at 60mOhm maximum at 3.4A and 4.5V gate-source voltage, with a typical drive voltage range of 2.5V to 4.5V. Key electrical parameters include a maximum gate charge (Qg) of 6.6 nC at 4.5V and input capacitance (Ciss) of 544 pF at 10V. The operating temperature range for this device is -55°C to 150°C. This MOSFET is commonly utilized in power management and switching applications across various industries. The device is supplied in a Tape & Reel (TR) package.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.4A (Ta)
Rds On (Max) @ Id, Vgs60mOhm @ 3.4A, 4.5V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id700mV @ 250µA (Min)
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds544 pF @ 10 V

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