ZXMN2A03E6TC
MOSFET N-CH 20V 3.7A SOT23-6Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXMN2A03E6TC is an N-Channel MOSFET designed for efficient power switching applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 3.7A at 25°C, with a maximum power dissipation of 1.1W (Ta). The low on-resistance (Rds On) of 55mOhm at 7.2A and 4.5V gate-source voltage (Vgs) makes it suitable for demanding power management tasks.
Key parameters include a gate charge (Qg) of 8.2 nC at 4.5V and an input capacitance (Ciss) of 837 pF at 10V. The device operates across a temperature range of -55°C to 150°C (TJ). The ZXMN2A03E6TC is provided in a SOT-23-6 surface mount package, supplied on tape and reel. This MOSFET is commonly utilized in consumer electronics, industrial automation, and automotive systems where robust and efficient switching is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 7.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | SOT-23-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 837 pF @ 10 V |
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