ZXMN2A02X8TC
MOSFET N-CH 20V 6.2A 8MSOPManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXMN2A02X8TC is an N-Channel Power MOSFET designed for efficient switching applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 6.2A at 25°C ambient. The device exhibits a low on-resistance of 20mOhm maximum at 11A and 4.5V gate-source voltage, with a gate threshold voltage of 700mV minimum at 250µA. With a gate charge of 18.6 nC maximum at 4.5V and input capacitance of 1900 pF maximum at 10V, it is optimized for various power management tasks. The ZXMN2A02X8TC is housed in a compact 8-MSOP package, suitable for surface mounting. This MOSFET is commonly utilized in automotive, industrial, and consumer electronics sectors where efficient power control is critical. The maximum power dissipation is rated at 1.1W (Ta), and it operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 11A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-MSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 10 V |
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