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ZXMN2A02X8TA

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ZXMN2A02X8TA

MOSFET N-CH 20V 6.2A 8MSOP

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZXMN2A02X8TA is a 20V N-Channel Power MOSFET designed for surface mount applications. This component offers a continuous drain current of 6.2A (Ta) and a low on-resistance of 20mOhm at 11A, 4.5V. The ZXMN2A02X8TA features a 2.5V/4.5V gate drive with a maximum gate charge of 18.6 nC at 4.5V and input capacitance of 1900 pF at 10V. Rated for a maximum power dissipation of 1.1W (Ta), it operates across a wide temperature range of -55°C to 150°C (TJ). The device is housed in an 8-MSOP package and is supplied on tape and reel. This MOSFET is suitable for use in power management and switching applications across various industries.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-TSSOP, 8-MSOP (0.118"", 3.00mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6.2A (Ta)
Rds On (Max) @ Id, Vgs20mOhm @ 11A, 4.5V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Vgs(th) (Max) @ Id700mV @ 250µA (Min)
Supplier Device Package8-MSOP
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs18.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 10 V

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