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ZXMN2A01FTC

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ZXMN2A01FTC

MOSFET N-CH 20V 1.9A SOT23-3

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Diodes Incorporated ZXMN2A01FTC is an N-Channel MOSFET designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) capability of 1.9A at 25°C ambient. Its low on-resistance of 120mOhm is achieved at 4A drain current and 4.5V gate-source voltage, with a typical drive voltage range of 2.5V to 4.5V. The ZXMN2A01FTC offers a maximum power dissipation of 625mW (Ta) and is housed in a compact SOT-23-3 (TO-236-3, SC-59) surface mount package, supplied on tape and reel. Key parameters include a maximum gate charge of 3nC at 4.5V Vgs and input capacitance of 303pF at 15V Vds. This MOSFET is suitable for use in power management circuits and general-purpose switching applications across various electronic industries. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.9A (Ta)
Rds On (Max) @ Id, Vgs120mOhm @ 4A, 4.5V
FET Feature-
Power Dissipation (Max)625mW (Ta)
Vgs(th) (Max) @ Id700mV @ 250µA (Min)
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds303 pF @ 15 V

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