ZXMN2A01E6TC
MOSFET N-CH 20V 2.5A SOT23-6Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXMN2A01E6TC is a 20V N-Channel MOSFET designed for surface mount applications in a SOT-23-6 package. This device offers a continuous drain current of 2.5A (Ta) with a maximum power dissipation of 1.1W (Ta). Key electrical characteristics include a low Rds(on) of 120mOhm at 4A and 4.5V, a gate charge (Qg) of 3nC at 4.5V, and input capacitance (Ciss) of 303pF at 15V. The gate-source threshold voltage (Vgs(th)) is a maximum of 700mV at 250µA. This component is suitable for use in industrial and consumer electronics applications. It operates within a temperature range of -55°C to 150°C (TJ) and is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | SOT-23-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 303 pF @ 15 V |
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