ZXMN15A27KTC
MOSFET N-CH 150V 1.7A TO252-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated ZXMN15A27KTC is an N-Channel Power MOSFET housed in a TO-252-3 (DPAK) surface-mount package. This component features a drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 1.7 A at 25°C. Its on-resistance (Rds On) is specified at a maximum of 650 mOhm when driven at 10 V with a drain current of 2.15 A. The device offers a gate-source voltage (Vgs) range of ±25 V and a gate threshold voltage (Vgs(th)) of 4 V at 250 µA. Key electrical parameters include a maximum gate charge (Qg) of 6.6 nC at 10 V and a maximum input capacitance (Ciss) of 169 pF at 25 V. With a power dissipation of 2.2 W (Ta) and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for applications in power management and general switching. The component is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 2.15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 169 pF @ 25 V |
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