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ZXMN15A27KTC

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ZXMN15A27KTC

MOSFET N-CH 150V 1.7A TO252-3

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Diodes Incorporated ZXMN15A27KTC is an N-Channel Power MOSFET housed in a TO-252-3 (DPAK) surface-mount package. This component features a drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 1.7 A at 25°C. Its on-resistance (Rds On) is specified at a maximum of 650 mOhm when driven at 10 V with a drain current of 2.15 A. The device offers a gate-source voltage (Vgs) range of ±25 V and a gate threshold voltage (Vgs(th)) of 4 V at 250 µA. Key electrical parameters include a maximum gate charge (Qg) of 6.6 nC at 10 V and a maximum input capacitance (Ciss) of 169 pF at 25 V. With a power dissipation of 2.2 W (Ta) and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for applications in power management and general switching. The component is supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.7A (Ta)
Rds On (Max) @ Id, Vgs650mOhm @ 2.15A, 10V
FET Feature-
Power Dissipation (Max)2.2W (Ta)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds169 pF @ 25 V

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