ZXMN10B08E6TC
MOSFET N-CH 100V 1.6A SOT26Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Diodes Incorporated ZXMN10B08E6TC is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 1.6 A at 25°C. With a maximum on-resistance (Rds On) of 230 mOhm at 1.6 A and 10 V gate-source voltage, it offers low conduction losses. The device operates across a wide temperature range of -55°C to 150°C, making it suitable for demanding environments. Its SOT-26 package facilitates compact board designs, and it is supplied on tape and reel for automated assembly. The ZXMN10B08E6TC finds application in power management, consumer electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 1.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-26 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.3V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 497 pF @ 50 V |
Request a Quote
Clients Also Buy
DMN2053UQ-7
MOSFET BVDSS: 8V~24V SOT23 T&R 3
DMN2011UFDF-13
MOSFET N-CH 20V 14.2A 6UDFN
DMN3008SFGQ-13
MOSFET N-CH 30V PWRDI3333
