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ZXMN10A25K

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ZXMN10A25K

MOSFET N-CH 100V 4.2A TO252-3

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZXMN10A25K is a N-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 4.2A at 25°C, with a maximum power dissipation of 2.11W (Ta). The on-resistance (Rds On) is specified at a maximum of 125mOhm at 2.9A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 17.16 nC and Input Capacitance (Ciss) of 859 pF, both measured at specified voltages. The ZXMN10A25K utilizes MOSFET technology and is provided in a TO-252-3 (DPAK) surface mount package, supplied on tape and reel. Its operating temperature range is -55°C to 150°C (TJ). This component finds application in various industries including consumer electronics, industrial power supplies, and automotive systems where robust power management is critical.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4.2A (Ta)
Rds On (Max) @ Id, Vgs125mOhm @ 2.9A, 10V
FET Feature-
Power Dissipation (Max)2.11W (Ta)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252-3
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs17.16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds859 pF @ 50 V

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