ZXMN10A25K
MOSFET N-CH 100V 4.2A TO252-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated ZXMN10A25K is a N-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 4.2A at 25°C, with a maximum power dissipation of 2.11W (Ta). The on-resistance (Rds On) is specified at a maximum of 125mOhm at 2.9A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 17.16 nC and Input Capacitance (Ciss) of 859 pF, both measured at specified voltages. The ZXMN10A25K utilizes MOSFET technology and is provided in a TO-252-3 (DPAK) surface mount package, supplied on tape and reel. Its operating temperature range is -55°C to 150°C (TJ). This component finds application in various industries including consumer electronics, industrial power supplies, and automotive systems where robust power management is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.11W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 859 pF @ 50 V |
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