ZXMN10A11K
MOSFET N-CH 100V 2.4A TO252-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Diodes Incorporated ZXMN10A11K is an N-Channel MOSFET designed for surface mount applications. This device features a 100V drain-source breakdown voltage and a continuous drain current capability of 2.4A at 25°C ambient, with a maximum power dissipation of 2.11W. The ZXMN10A11K exhibits a maximum on-resistance of 350mOhm at 2.6A and 10V gate-source voltage. Key electrical characteristics include a gate charge of 5.4 nC at 10V and an input capacitance of 274 pF at 50V. This MOSFET is packaged in a TO-252-3 (DPAK) configuration, supplied on tape and reel. Typical industry applications include power management and switching circuits, often found in consumer electronics and industrial automation. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 2.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.11W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 274 pF @ 50 V |
Request a Quote
Clients Also Buy
DMN2053UQ-7
MOSFET BVDSS: 8V~24V SOT23 T&R 3
DMN2011UFDF-13
MOSFET N-CH 20V 14.2A 6UDFN
DMN3008SFGQ-13
MOSFET N-CH 30V PWRDI3333
