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ZXMN10A11GTC

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ZXMN10A11GTC

MOSFET N-CH 100V 1.7A SOT223

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated ZXMN10A11GTC is an N-Channel power MOSFET designed for efficient power switching applications. This device features a maximum drain-source voltage of 100 V and a continuous drain current of 1.7 A at 25°C ambient temperature, with a maximum power dissipation of 2 W. The MOSFET exhibits a low on-resistance of 350 mOhm at 2.6 A and a gate-source voltage of 10 V. Key parameters include a gate charge of 5.4 nC at 10 V and input capacitance of 274 pF at 50 V. The ZXMN10A11GTC is housed in a SOT-223-3 (TO-261-4, TO-261AA) surface mount package, ideal for compact designs. It operates across a wide temperature range of -55°C to 150°C. This component is suitable for use in various industries including automotive, industrial, and consumer electronics, particularly in power management and switching circuits. The drive voltage range for optimal performance is 6 V to 10 V, with a maximum gate-source voltage tolerance of ±20V. The threshold voltage (Vgs(th)) is a maximum of 4 V at 250 µA. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.7A (Ta)
Rds On (Max) @ Id, Vgs350mOhm @ 2.6A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageSOT-223-3
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds274 pF @ 50 V

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